Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SI3459BDV-T1-E3
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RFQ
2,136
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Vishay Siliconix MOSFET P-CH 60V 2.9A 6-TSOP TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-TSOP 3.3W (Tc) P-Channel - 60V 2.9A (Tc) 216 mOhm @ 2.2A, 10V 3V @ 250µA 12nC @ 10V 350pF @ 30V 4.5V, 10V ±20V
SI3458BDV-T1-GE3
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RFQ
627
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Vishay Siliconix MOSFET N-CH 60V 4.1A 6-TSOP TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-TSOP 2W (Ta), 3.3W (Tc) N-Channel - 60V 4.1A (Tc) 100 mOhm @ 3.2A, 10V 3V @ 250µA 11nC @ 10V 350pF @ 30V 4.5V, 10V ±20V
SI3458BDV-T1-E3
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RFQ
1,440
Ships today + free overnight shipping
Vishay Siliconix MOSFET N-CH 60V 4.1A 6-TSOP TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-TSOP 2W (Ta), 3.3W (Tc) N-Channel - 60V 4.1A (Tc) 100 mOhm @ 3.2A, 10V 3V @ 250µA 11nC @ 10V 350pF @ 30V 4.5V, 10V ±20V
SI3459BDV-T1-GE3
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RFQ
3,516
Ships today + free overnight shipping
Vishay Siliconix MOSFET P-CH 60V 2.9A 6-TSOP TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-TSOP 2W (Ta), 3.3W (Tc) P-Channel - 60V 2.9A (Tc) 216 mOhm @ 2.2A, 10V 3V @ 250µA 12nC @ 10V 350pF @ 30V 4.5V, 10V ±20V
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