- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
9 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,852
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Diodes Incorporated | MOSFET P-CH 30V 4.9A TSOT-26 | - | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 | 1.2W (Ta) | P-Channel | 30V | 4.9A (Ta) | 42 mOhm @ 4.9A, 10V | 2.1V @ 250µA | 12.3nC @ 10V | 587pF @ 15V | 4.5V, 10V | ±20V | ||
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1,669
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Infineon Technologies | MOSFET P-CH 30V 4A 6-TSOP | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | Micro6™(TSOP-6) | 2W (Ta) | P-Channel | 30V | 4A (Ta) | 85 mOhm @ 4A, 10V | 1V @ 250µA | 17nC @ 10V | 535pF @ 25V | 4.5V, 10V | ±20V | ||
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685
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Toshiba Semiconductor and Storage | MOSFET P-CH 30V 5A VS-6 | U-MOSIII-H | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | P-Channel | 30V | 5A (Ta) | 59 mOhm @ 2.5A, 10V | 1.2V @ 200µA | 12.3nC @ 10V | 490pF @ 10V | 4.5V, 10V | ±20V | ||
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3,361
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|
Vishay Siliconix | MOSFET P-CH 30V 4.7A 6-TSOP | TrenchFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 1.14W (Ta) | P-Channel | 30V | 4.7A (Ta) | 35 mOhm @ 6.2A, 10V | 3V @ 250µA | 35nC @ 10V | - | 4.5V, 10V | ±20V | ||
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802
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Vishay Siliconix | MOSFET P-CH 30V 4A 6-TSOP | TrenchFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 1.14W (Ta) | P-Channel | 30V | 4A (Ta) | 48 mOhm @ 5.3A, 10V | 3V @ 250µA | 25nC @ 10V | - | 4.5V, 10V | ±20V | ||
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3,639
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Vishay Siliconix | MOSFET P-CH 30V 3.7A 6-TSOP | TrenchFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 1.14W (Ta) | P-Channel | 30V | 3.7A (Ta) | 54 mOhm @ 5A, 10V | 3V @ 250µA | 19nC @ 10V | - | 4.5V, 10V | ±20V | ||
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3,869
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Vishay Siliconix | MOSFET P-CH 30V 2.7A 6-TSOP | TrenchFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | 1.14W (Ta) | P-Channel | 30V | 2.7A (Ta) | 100 mOhm @ 3.5A, 10V | 3V @ 250µA | 13nC @ 10V | - | 4.5V, 10V | ±20V | ||
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1,137
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Infineon Technologies | MOSFET P-CH 30V 5.5A TSOP6 | OptiMOS™ | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | PG-TSOP6-6 | 2W (Ta) | P-Channel | 30V | 5.5A (Ta) | 43 mOhm @ 5.5A, 10V | 2V @ 40µA | 29nC @ 10V | 805pF @ 25V | 4.5V, 10V | ±20V | ||
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1,941
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|
ON Semiconductor | MOSFET P-CH 30V 2.4A SSOT6 | - | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | SuperSOT™-6 | 1.6W (Ta) | P-Channel | 30V | 2.4A (Ta) | 110 mOhm @ 3.1A, 10V | 3V @ 250µA | 20nC @ 10V | 290pF @ 15V | 4.5V, 10V | -20V |
