Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPD35N12S3L24ATMA1
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RFQ
3,118
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Infineon Technologies MOSFET N-CH 120V 35A TO252-3 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 71W (Tc) N-Channel - 120V 35A (Tc) 24 mOhm @ 35A, 10V 2.4V @ 39µA 39nC @ 10V 2700pF @ 25V 4.5V, 10V ±20V
IPD65R400CEAUMA1
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3,660
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Infineon Technologies MOSFET N-CH 650V TO-252 CoolMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 118W (Tc) N-Channel Super Junction 650V 15.1A (Tc) 400 mOhm @ 3.2A, 10V 3.5V @ 320µA 39nC @ 10V 710pF @ 100V 10V ±20V
IPD35N10S3L26ATMA1
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1,199
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Infineon Technologies MOSFET N-CH 100V 35A TO252-3 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 71W (Tc) N-Channel - 100V 35A (Tc) 24 mOhm @ 35A, 10V 2.4V @ 39µA 39nC @ 10V 2700pF @ 25V 4.5V, 10V ±20V
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