Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
BSZ110N08NS5ATMA1
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1,991
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Infineon Technologies MOSFET N-CH 80V 40A 8TSDSON OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8-FL 50W (Tc) N-Channel - 80V 40A (Tc) 11 mOhm @ 20A, 10V 3.8V @ 22µA 18.5nC @ 10V 1300pF @ 40V 6V, 10V ±20V
BSZ12DN20NS3GATMA1
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2,163
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Infineon Technologies MOSFET N-CH 200V 11.3A 8TSDSON OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 50W (Tc) N-Channel - 200V 11.3A (Tc) 125 mOhm @ 5.7A, 10V 4V @ 25µA 8.7nC @ 10V 680pF @ 100V 10V ±20V
BSC12DN20NS3GATMA1
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RFQ
954
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Infineon Technologies MOSFET N-CH 200V 11.3A 8TDSON OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 50W (Tc) N-Channel - 200V 11.3A (Tc) 125 mOhm @ 5.7A, 10V 4V @ 25µA 8.7nC @ 10V 680pF @ 100V 10V ±20V
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