Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
BSZ100N06LS3GATMA1
GET PRICE
RFQ
1,245
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 60V 20A TSDSON-8 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PG-TSDSON-8 2.1W (Ta), 50W (Tc) N-Channel - 60V 11A (Ta), 20A (Tc) 10 mOhm @ 20A, 10V 2.2V @ 23µA 45nC @ 10V 3500pF @ 30V 4.5V, 10V ±20V
BSZ100N03LSGATMA1
GET PRICE
RFQ
3,099
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 30V 40A TSDSON-8 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 30W (Tc) N-Channel - 30V 12A (Ta), 40A (Tc) 10 mOhm @ 20A, 10V 2.2V @ 250µA 17nC @ 10V 1500pF @ 15V 4.5V, 10V ±20V
BSZ100N06NSATMA1
GET PRICE
RFQ
3,424
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 60V 40A 8TSDSON OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8-FL 2.1W (Ta), 36W (Tc) N-Channel - 60V 40A (Tc) 10 mOhm @ 20A, 10V 3.3V @ 14µA 15nC @ 10V 1075pF @ 30V 6V, 10V ±20V
Page 1 / 1