Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPB042N10N3GATMA1
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RFQ
2,609
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 100V 100A TO263-3 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 214W (Tc) N-Channel - 100V 100A (Tc) 4.2 mOhm @ 50A, 10V 3.5V @ 150µA 117nC @ 10V 8410pF @ 50V 6V, 10V ±20V
BSC042NE7NS3GATMA1
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RFQ
2,657
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Infineon Technologies MOSFET N-CH 75V 100A TDSON-8 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 125W (Tc) N-Channel - 75V 19A (Ta), 100A (Tc) 4.2 mOhm @ 50A, 10V 3.8V @ 91µA 69nC @ 10V 4800pF @ 37.5V 10V ±20V
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