Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
BSZ42DN25NS3GATMA1
GET PRICE
RFQ
1,778
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 250V 5A TSDSON-8 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 33.8W (Tc) N-Channel - 250V 5A (Tc) 425 mOhm @ 2.5A, 10V 4V @ 13µA 5.5nC @ 10V 430pF @ 100V 10V ±20V
BSC22DN20NS3GATMA1
GET PRICE
RFQ
2,411
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 200V 7A 8TDSON OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 34W (Tc) N-Channel - 200V 7A (Tc) 225 mOhm @ 3.5A, 10V 4V @ 13µA 5.6nC @ 10V 430pF @ 100V 10V ±20V
BSZ22DN20NS3GATMA1
GET PRICE
RFQ
2,564
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 200V 7A 8TSDSON OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 34W (Tc) N-Channel - 200V 7A (Tc) 225 mOhm @ 3.5A, 10V 4V @ 13µA 5.6nC @ 10V 430pF @ 100V 10V ±20V
Page 1 / 1