4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SIS488DN-T1-GE3
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RFQ
2,228
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Vishay Siliconix MOSFET N-CH 40V 40A 1212-8 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 3.7W (Ta), 52W (Tc) N-Channel - 40V 40A (Tc) 5.5 mOhm @ 20A, 10V 2.2V @ 250µA 32nC @ 10V 1330pF @ 20V 4.5V, 10V ±20V
SISA04DN-T1-GE3
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1,854
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Vishay Siliconix MOSFET N-CH 30V 40A 1212-8 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 3.7W (Ta), 52W (Tc) N-Channel - 30V 40A (Tc) 2.15 mOhm @ 15A, 10V 2.2V @ 250µA 77nC @ 10V 3595pF @ 15V 4.5V, 10V +20V, -16V
SIS862DN-T1-GE3
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RFQ
2,991
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Vishay Siliconix MOSFET N-CH 60V 40A 1212 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 3.7W (Ta), 52W (Tc) N-Channel - 60V 40A (Tc) 8.5 mOhm @ 20A, 10V 2.6V @ 250µA 32nC @ 10V 1320pF @ 30V 4.5V, 10V ±20V
SIS476DN-T1-GE3
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RFQ
3,403
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Vishay Siliconix MOSFET N-CH 30V 40A 1212-8 PWR TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8 3.7W (Ta), 52W (Tc) N-Channel - 30V 40A (Tc) 2.5 mOhm @ 15A, 10V 2.3V @ 250µA 77nC @ 10V 3595pF @ 15V 4.5V, 10V +20V, -16V
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