- Operating Temperature :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
7 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,134
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ON Semiconductor | MOSFET N-CH 100V 32A DPAK | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 100W (Tc) | N-Channel | - | 100V | 32A (Tc) | 37 mOhm @ 32A, 10V | 4V @ 250µA | 40nC @ 10V | 1450pF @ 25V | 10V | ±20V | ||
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3,717
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 11.5A DPAK | DTMOSV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 100W (Tc) | N-Channel | - | 600V | 11.5A (Tc) | 290 mOhm @ 5.8A, 10V | 4V @ 450µA | 25nC @ 10V | 730pF @ 300V | 10V | ±30V | ||
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1,312
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STMicroelectronics | MOSFET N-CH 55V 60A DPAK | STripFET™ II | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 100W (Tc) | N-Channel | - | 55V | 60A (Tc) | 15 mOhm @ 30A, 10V | 2V @ 250µA | 56nC @ 5V | 1950pF @ 25V | 4.5V, 10V | ±15V | ||
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1,300
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STMicroelectronics | MOSFET N-CH 100V 25A DPAK | STripFET™ II | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 100W (Tc) | N-Channel | - | 100V | 25A (Tc) | 35 mOhm @ 12.5A, 10V | 2.5V @ 250µA | 52nC @ 5V | 1710pF @ 25V | 4.5V, 10V | ±16V | ||
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2,104
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 11.1A DPAK-0S | DTMOSIV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 100W (Tc) | N-Channel | - | 650V | 11.1A (Ta) | 440 mOhm @ 5.5A, 10V | 3.5V @ 450µA | 25nC @ 10V | 890pF @ 300V | 10V | ±30V | ||
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1,191
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STMicroelectronics | MOSFET N-CH 500V 11A DPAK | FDmesh™ II | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 100W (Tc) | N-Channel | - | 500V | 11A (Tc) | 380 mOhm @ 5.5A, 10V | 5V @ 250µA | 30nC @ 10V | 850pF @ 50V | 10V | ±25V | ||
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3,528
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 11.5A DPAK | DTMOSV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 100W (Tc) | N-Channel | - | 650V | 11.5A (Tc) | 290 mOhm @ 5.8A, 10V | 4V @ 450µA | 25nC @ 10V | 730pF @ 300V | 10V | ±30V |
