- Series :
- Operating Temperature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,549
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Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 60V 58A DPAK | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 87W (Tc) | N-Channel | - | 60V | 58A (Tc) | 4.4 mOhm @ 29A, 10V | 2.5V @ 500µA | 48.2nC @ 10V | 3280pF @ 30V | 4.5V, 10V | ±20V | ||
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2,527
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Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 40V 58A DPAK | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 87W (Tc) | N-Channel | - | 40V | 58A (Tc) | 3.1 mOhm @ 29A, 10V | 2.4V @ 500µA | 60nC @ 10V | 4670pF @ 20V | 4.5V, 10V | ±20V | ||
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819
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Infineon Technologies | MOSFET N-CH 30V 61A DPAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 87W (Tc) | N-Channel | - | 30V | 61A (Tc) | 12.5 mOhm @ 15A, 10V | 2V @ 250µA | 24nC @ 4.5V | 2417pF @ 15V | 2.8V, 10V | ±12V |
