- Technology :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs (Max) :
10 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,573
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Renesas Electronics America | MOSFET N-CH 30V 16A 8-SOP | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 2W (Ta) | N-Channel | - | 30V | 16A (Ta) | 7 mOhm @ 8A, 10V | - | 12nC @ 4.5V | 1740pF @ 10V | 4.5V, 10V | ±20V | ||
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2,877
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Infineon Technologies | MOSFET N-CH 25V 16A 8PQFN | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (3.3x3.3), Power33 | 3W (Ta), 30W (Tc) | N-Channel | - | 25V | 16A (Ta) | 7.7 mOhm @ 20A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | 1040pF @ 10V | 4.5V, 10V | ±20V | ||
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1,128
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ON Semiconductor | MOSFET N-CH 20V 16A 8-SOIC | PowerTrench® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 20V | 16A (Ta) | 6 mOhm @ 16A, 4.5V | 1.5V @ 250µA | 105nC @ 4.5V | 7657pF @ 10V | 1.8V, 4.5V | ±8V | ||
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2,760
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Vishay Siliconix | MOSFET N-CH 30V D-S PPAK 1212-8 | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | - | N-Channel | - | 30V | 16A (Ta) | 6.8 mOhm @ 15A, 10V | 2.3V @ 250µA | 47nC @ 10V | 2060pF @ 15V | - | - | ||
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1,804
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|
Infineon Technologies | MOSFET N-CH 20V 16A 8-SOIC | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 20V | 16A (Ta) | 6.5 mOhm @ 16A, 10V | 2V @ 250µA | 62nC @ 5V | 3640pF @ 15V | 2.8V, 10V | ±12V | ||
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676
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Rohm Semiconductor | MOSFET N-CH 30V 16A 8HSMT | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-HSMT (3.2x3) | 2W (Ta) | N-Channel | - | 30V | 16A (Ta) | 4.5 mOhm @ 16A, 10V | 2.5V @ 1mA | 51nC @ 10V | 2550pF @ 15V | 4.5V, 10V | ±20V | ||
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3,598
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ON Semiconductor | MOSFET N-CH 40V 40A 8WDFN | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerWDFN | 8-WDFN (3.3x3.3) | 3.2W (Ta), 21W (Tc) | N-Channel | - | 40V | 16A (Ta) | 6.7 mOhm @ 20A, 10V | 2.2V @ 250µA | 30nC @ 10V | 1570pF @ 25V | 4.5V, 10V | ±20V | ||
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2,528
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|
Infineon Technologies | MOSFET N-CH 30V 16A 8-SOIC | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 16A (Ta) | 6.8 mOhm @ 16A, 10V | 2.25V @ 250µA | 27nC @ 4.5V | 2080pF @ 15V | 4.5V, 10V | ±20V | ||
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845
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EPC | TRANS GAN 40V BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 40V | 16A (Ta) | 5 mOhm @ 15A, 5V | 2.5V @ 6mA | 7.6nC @ 5V | 805pF @ 20V | 5V | +6V, -4V | ||
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3,093
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EPC | TRANS GAN 100V BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | - | 100V | 16A (Ta) | 7 mOhm @ 16A, 5V | 2.5V @ 5mA | 6.5nC @ 5V | 685pF @ 50V | 5V | +6V, -4V |
