- Technology :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs (Max) :
13 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,638
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Renesas Electronics America | MOSFET N-CH 20V 60A LFPAK | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 30W (Tc) | N-Channel | 20V | 60A (Ta) | 2.6 mOhm @ 30A, 10V | 2.3V @ 1mA | 54nC @ 4.5V | 7750pF @ 10V | 4.5V, 10V | ±20V | ||
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1,543
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Renesas Electronics America | MOSFET N-CH 30V 60A 5-LFPAK | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | 5-LFPAK | 65W (Tc) | N-Channel | 30V | 60A (Ta) | 2.8 mOhm @ 30A, 10V | - | 32nC @ 4.5V | 5000pF @ 10V | 4.5V, 10V | +16V, -12V | ||
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2,488
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Renesas Electronics America | MOSFET N-CH 30V 60A LFPAK | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 65W (Tc) | N-Channel | 30V | 60A (Ta) | 2.1 mOhm @ 30A, 10V | 2.5V @ 1mA | 42nC @ 4.5V | 6380pF @ 10V | - | - | ||
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3,958
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ON Semiconductor | MOSFET N-CH 60V 60A D2PAK | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 2.4W (Ta), 150W (Tj) | N-Channel | 60V | 60A (Ta) | 14 mOhm @ 30A, 10V | 4V @ 250µA | 81nC @ 10V | 3220pF @ 25V | 10V | ±20V | ||
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3,694
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ON Semiconductor | MOSFET N-CH 30V 60A TO-263AB | PowerTrench® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -65°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 60W (Tc) | N-Channel | 30V | 60A (Ta) | 9 mOhm @ 30A, 10V | 3V @ 250µA | 24nC @ 5V | 1760pF @ 15V | 4.5V, 10V | ±20V | ||
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2,209
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 60A 8-SOP | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 64W (Tc) | N-Channel | 30V | 60A (Ta) | 1.4 mOhm @ 30A, 10V | 2.3V @ 500µA | 46nC @ 10V | 4400pF @ 15V | 4.5V, 10V | ±20V | ||
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890
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Texas Instruments | MOSFET N-CH 30V 60A 8VSON | NexFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-VSONP (3x3.15) | 3W (Ta), 53W (Tc) | N-Channel | 30V | 60A (Ta) | 4.2 mOhm @ 18A, 10V | 1.8V @ 250µA | 35nC @ 10V | 2310pF @ 15V | 4.5V, 10V | ±20V | ||
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1,498
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Texas Instruments | MOSFET N-CH 30V 60A 8VSON | NexFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-VSONP (3x3.15) | 3W (Ta), 53W (Tc) | N-Channel | 30V | 60A (Ta) | 4.2 mOhm @ 18A, 10V | 1.8V @ 250µA | 35nC @ 10V | 2310pF @ 15V | 4.5V, 10V | ±20V | ||
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2,590
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Texas Instruments | MOSFET N-CH 30V 60A 8VSON | NexFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-VSONP (5x6) | 2.8W (Ta), 108W (Tc) | N-Channel | 30V | 60A (Ta) | 2.3 mOhm @ 25A, 10V | 1.8V @ 250µA | 30nC @ 4.5V | 4420pF @ 15V | 4.5V, 10V | ±20V | ||
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3,600
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Texas Instruments | MOSFET N-CH 30V 60A 8VSON | NexFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-VSONP (5x6) | 2.8W (Ta), 108W (Tc) | N-Channel | 30V | 60A (Ta) | 2.3 mOhm @ 25A, 10V | 1.8V @ 250µA | 30nC @ 4.5V | 4420pF @ 15V | 4.5V, 10V | ±20V | ||
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3,763
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EPC | TRANS GAN 100V 3MOHM BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 100V | 60A (Ta) | 3.2 mOhm @ 25A, 5V | 2.5V @ 12mA | - | 1500pF @ 50V | 5V | +6V, -4V | ||
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2,232
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EPC | MOSFET NCH 40V 60A DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | - | N-Channel | 40V | 60A (Ta) | 1.5 mOhm @ 37A, 5V | 2.5V @ 19mA | - | 2100pF @ 20V | 5V | +6V, -4V | ||
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707
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EPC | TRANS GAN 30V 60A BUMPED DIE | eGaN® | Active | Digi-Reel® | GaNFET (Gallium Nitride) | - | Surface Mount | Die | Die | - | N-Channel | 30V | 60A (Ta) | 1.3 mOhm @ 40A, 5V | 2.5V @ 20mA | - | 2300pF @ 15V | - | - |
