Operating Temperature :
Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SSM3K56ACT,L3F
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RFQ
1,961
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Toshiba Semiconductor and Storage MOSFET N-CH 20V 1.4A CST3 U-MOSVII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-101, SOT-883 CST3 500mW (Ta) N-Channel - 20V 1.4A (Ta) 235 mOhm @ 800mA, 4.5V 1V @ 1mA 1nC @ 4.5V 55pF @ 10V 1.5V, 4.5V ±8V
SSM3K56FS,LF
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RFQ
3,153
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Toshiba Semiconductor and Storage MOSFET N-CH 20V 0.8A SSM U-MOSVII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-75, SOT-416 SSM 150mW (Ta) N-Channel - 20V 800mA (Ta) 235 mOhm @ 800mA, 4.5V 1V @ 1mA 1nC @ 4.5V 55pF @ 10V 1.5V, 4.5V ±8V
SSM3K56CT,L3F
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RFQ
2,444
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Toshiba Semiconductor and Storage MOSFET NCH 20V 800MA CST3 U-MOSVII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TA) Surface Mount 3-XFDFN CST3 500mW (Ta) N-Channel - 20V 800mA (Ta) 235 mOhm @ 800mA, 4.5V 1V @ 1mA 1nC @ 4.5V 55pF @ 10V 1.5V, 4.5V ±8V
SSM3K56MFV,L3F
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RFQ
3,992
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Toshiba Semiconductor and Storage MOSFET N-CH 20V 0.8A VESM U-MOSVII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-723 VESM 150mW (Ta) N-Channel - 20V 800mA (Ta) 235 mOhm @ 800mA, 4.5V 1V @ 1mA 1nC @ 4.5V 55pF @ 10V 1.5V, 4.5V ±8V
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