Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs (Max) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
CZDM1003N TR
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RFQ
2,140
Ships today + free overnight shipping
Central Semiconductor Corp MOSFET N-CH 100V 3A SOT-223 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 2W (Ta) N-Channel - 100V 3A (Ta) 150 mOhm @ 2A, 10V 4V @ 250µA 15nC @ 10V 975pF @ 25V 10V 20V
SSM3K337R,LF
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RFQ
2,882
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Toshiba Semiconductor and Storage MOSFET N-CH 38V 2A U-MOSIV Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) N-Channel - 38V 2A (Ta) 150 mOhm @ 2A, 10V 1.7V @ 1mA 3nC @ 10V 120pF @ 10V 4V, 10V ±20V
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