- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
10 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,132
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Infineon Technologies | MOSFET N-CH 30V 32A DIRECTFET | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.8W (Ta), 89W (Tc) | N-Channel | - | 30V | 32A (Ta), 180A (Tc) | 1.7 mOhm @ 32A, 10V | 2.35V @ 100µA | 74nC @ 4.5V | 6190pF @ 15V | 4.5V, 10V | ±20V | ||
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1,279
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Infineon Technologies | MOSFET N-CH 30V 24A 8-SO | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 24A (Ta) | 2.8 mOhm @ 24A, 10V | 2.35V @ 100µA | 66nC @ 4.5V | 5720pF @ 15V | 4.5V, 10V | ±20V | ||
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2,002
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Infineon Technologies | MOSFET N CH 30V 32A PQFN5X6 | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TQFN Exposed Pad | PQFN (5x6) | 3.6W (Ta), 96W (Tc) | N-Channel | - | 30V | 32A (Ta), 169A (Tc) | 2.1 mOhm @ 20A, 10V | 2.35V @ 100µA | 66nC @ 10V | 4960pF @ 10V | 4.5V, 10V | ±20V | ||
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3,683
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Infineon Technologies | MOSFET N-CH 25V 32A DIRECTFET-MX | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.8W (Ta), 75W (Tc) | N-Channel | - | 25V | 32A (Ta), 160A (Tc) | 1.8 mOhm @ 32A, 10V | 2.35V @ 100µA | 53nC @ 4.5V | 4280pF @ 13V | 4.5V, 10V | ±20V | ||
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2,592
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Infineon Technologies | MOSFET N-CH 30V 28A MX | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.8W (Ta), 100W (Tc) | N-Channel | - | 30V | 28A (Ta), 170A (Tc) | 2.2 mOhm @ 28A, 10V | 2.35V @ 100µA | 42nC @ 4.5V | 4700pF @ 15V | 4.5V, 10V | ±20V | ||
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1,821
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Infineon Technologies | MOSFET N-CH 30V 160A DPAK | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 135W (Tc) | N-Channel | - | 30V | 160A (Tc) | 3.1 mOhm @ 25A, 10V | 2.35V @ 100µA | 59nC @ 4.5V | 4880pF @ 15V | 4.5V, 10V | ±20V | ||
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1,806
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Infineon Technologies | MOSFET N-CH 30V 35A 5X6 PQFN | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) Single Die | 3.6W (Ta) | N-Channel | - | 30V | 35A (Ta), 100A (Tc) | 1.85 mOhm @ 50A, 10V | 2.35V @ 100µA | 77nC @ 10V | 5114pF @ 15V | 4.5V, 10V | ±20V | ||
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3,004
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Infineon Technologies | MOSFET N-CH 30V 21A 8-SOIC | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 30V | 21A (Ta) | 3.7 mOhm @ 20A, 10V | 2.35V @ 100µA | 45nC @ 4.5V | 4090pF @ 15V | 4.5V, 10V | ±20V | ||
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3,431
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Infineon Technologies | MOSFET N-CH 30V 32A 5X6 PQFN | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) Single Die | 3.6W (Ta), 100W (Tc) | N-Channel | - | 30V | 32A (Ta), 100A (Tc) | 2.1 mOhm @ 50A, 10V | 2.35V @ 100µA | 76nC @ 10V | 4400pF @ 15V | 4.5V, 10V | ±20V | ||
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1,774
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Infineon Technologies | MOSFET N-CH 30V 24A PQFN56 | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) Single Die | 3.4W (Ta) | N-Channel | - | 30V | 24A (Ta), 104A (Tc) | 3.3 mOhm @ 25A, 10V | 2.35V @ 100µA | 51nC @ 4.5V | 4270pF @ 15V | 4.5V, 10V | ±20V |
