5 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2,990
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Vishay Siliconix MOSFET N-CHAN 800V TO-220 FULLPA E Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 29W (Tc) N-Channel 800V 2.8A (Tc) 2.75 Ohm @ 1A, 10V 4V @ 250µA 19.6nC @ 10V 315pF @ 100V 10V ±30V
STL10N65M2
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2,407
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STMicroelectronics MOSFET N-CH 650V 4.5A POWERFLAT - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerSMD, Flat Leads PowerFlat™ (5x6) 48W (Tc) N-Channel 650V 4.5A (Tc) 1 Ohm @ 2.5A, 10V 4V @ 250µA 10.3nC @ 10V 315pF @ 100V 10V ±25V
STD9N65M2
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RFQ
1,904
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STMicroelectronics MOSFET N-CH 650V 5A DPAK MDmesh™ Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 60W (Tc) N-Channel 650V 5A (Tc) 900 mOhm @ 2.5A, 10V 4V @ 250µA 10nC @ 10V 315pF @ 100V 10V ±25V
SIHD2N80E-GE3
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RFQ
2,971
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Vishay Siliconix MOSFET N-CH 800V 2.8A DPAK E Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-PAK (TO-252AA) 62.5W (Tc) N-Channel 800V 2.8A (Tc) 2.75 Ohm @ 1A, 10V 4V @ 250µA 19.6nC @ 10V 315pF @ 100V 10V ±30V
TSM60NB900CP ROG
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RFQ
2,614
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 4A TO252 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 36.8W (Tc) N-Channel 600V 4A (Tc) 900 mOhm @ 1.2A, 10V 4V @ 250µA 9.6nC @ 10V 315pF @ 100V 10V ±30V
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