Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
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IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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1,492
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Vishay Siliconix MOSFET N-CHAN 600V EL Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 35W (Tc) N-Channel - 600V 21A (Tc) 180 mOhm @ 11A, 10V 4V @ 250µA 82nC @ 10V 1757pF @ 100V 10V ±30V
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Vishay Siliconix MOSFET N-CHAN 600V TO-220 FULLPA EL Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 39W (Tc) N-Channel - 600V 28A (Tc) 120 mOhm @ 15A, 10V 4V @ 250µA 120nC @ 10V 2565pF @ 100V 10V ±30V
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