- Manufacture :
- Series :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,732
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ON Semiconductor | MOSFET N-CH 600V 4.5A | QFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 100W (Tc) | N-Channel | - | 600V | 4.5A (Tc) | 2.5 Ohm @ 2.25A, 10V | 4V @ 250µA | 19nC @ 10V | 670pF @ 25V | 10V | ±30V | ||
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3,717
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 11.5A DPAK | DTMOSV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 100W (Tc) | N-Channel | - | 600V | 11.5A (Tc) | 290 mOhm @ 5.8A, 10V | 4V @ 450µA | 25nC @ 10V | 730pF @ 300V | 10V | ±30V |
