- Manufacture :
- Series :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,883
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Infineon Technologies | MOSFET N-CH 650V 17.5A TO263 | CoolMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 151W (Tc) | N-Channel | - | 650V | 17.5A (Tc) | 190 mOhm @ 7.3A, 10V | 4.5V @ 730µA | 68nC @ 10V | 1850pF @ 100V | 10V | ±20V | ||
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1,541
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|
Vishay Siliconix | MOSFET N-CHAN 650V 12A POWERPAK | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerPAK® 8 x 8 | 130W (Tc) | N-Channel | - | 650V | 12A (Tc) | 363 mOhm @ 6A, 10V | 4V @ 250µA | 68nC @ 10V | 1257pF @ 100V | 10V | ±30V | ||
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651
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Infineon Technologies | MOSFET N-CH 650V 35A TO263-3 | CoolMOS™ C7 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | PG-TO263-3 | 162W (Tc) | N-Channel | - | 650V | 35A (Tc) | 60 mOhm @ 15.9A, 10V | 4V @ 800µA | 68nC @ 10V | 2850pF @ 400V | 10V | ±20V | ||
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1,003
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Infineon Technologies | MOSFET N-CH 650V 44A HSOF-8 | CoolMOS™ G7 | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerSFN | PG-HSOF-8 | 245W (Tc) | N-Channel | - | 650V | 44A (Tc) | 50 mOhm @ 15.9A, 10V | 4V @ 800µA | 68nC @ 10V | 2670pF @ 400V | 10V | ±20V |
