Drain to Source Voltage (Vdss) :
12 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FDC86244
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1,852
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ON Semiconductor MOSFET N-CH 150V 2.3A 6SSOT PowerTrench® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 SuperSOT™-6 1.6W (Ta) N-Channel 150V 2.3A (Ta) 144 mOhm @ 2.3A, 10V 4V @ 250µA 6nC @ 10V 345pF @ 75V 6V, 10V ±20V
BSR606NH6327XTSA1
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1,478
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Infineon Technologies MOSFET N-CH 60V 2.3A SC59 Automotive, AEC-Q101, OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 PG-SC-59 500mW (Ta) N-Channel 60V 2.3A (Ta) 60 mOhm @ 2.3A, 10V 2.3V @ 15µA 5.6nC @ 5V 657pF @ 25V 4.5V, 10V ±20V
BSP716NH6327XTSA1
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2,561
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Infineon Technologies MOSFET N-CH 75V 2.3A SOT223 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel 75V 2.3A (Ta) 160 mOhm @ 2.3A, 10V 1.8V @ 218µA 13.1nC @ 10V 315pF @ 25V 4.5V, 10V ±20V
DMN10H220LE-13
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RFQ
2,299
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Diodes Incorporated MOSFET N-CH 100V 2.3A SOT223 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1.8W (Ta) N-Channel 100V 2.3A (Ta) 220 mOhm @ 1.6A, 10V 2.5V @ 250µA 8.3nC @ 10V 401pF @ 25V 4.5V, 10V ±20V
CSD17382F4T
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3,752
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Texas Instruments MOSFET N-CH 30V 2.3A PICOSTAR FemtoFET™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 3-XFDFN 3-PICOSTAR 500mW (Ta) N-Channel 30V 2.3A (Ta) 64 mOhm @ 500mA, 8V 1.2V @ 250µA 2.7nC @ 4.5V 347pF @ 15V 1.8V, 8V 10V
BSS806NEH6327XTSA1
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RFQ
1,895
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Infineon Technologies MOSFET N-CH 20V 2.3A SOT23 Automotive, AEC-Q101, HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 PG-SOT23-3 500mW (Ta) N-Channel 20V 2.3A (Ta) 57 mOhm @ 2.3A, 2.5V 0.75V @ 11µA 1.7nC @ 2.5V 529pF @ 10V 1.8V, 2.5V ±8V
BSS806NH6327XTSA1
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3,825
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Infineon Technologies MOSFET N-CH 20V 2.3A SOT23 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 PG-SOT23-3 500mW (Ta) N-Channel 20V 2.3A (Ta) 57 mOhm @ 2.3A, 2.5V 750mV @ 11µA 1.7nC @ 2.5V 529pF @ 10V 1.8V, 2.5V ±8V
SSM6K202FE,LF
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RFQ
981
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 2.3A ES6 - Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-563, SOT-666 ES6 (1.6x1.6) 500mW (Ta) N-Channel 30V 2.3A (Ta) 85 mOhm @ 1.5A, 4V 1V @ 1mA - 270pF @ 10V 1.8V, 4V ±12V
BSS306NH6327XTSA1
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RFQ
829
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Infineon Technologies MOSFET N-CH 30V 2.3A SOT23 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 PG-SOT23-3 500mW (Ta) N-Channel 30V 2.3A (Ta) 57 mOhm @ 2.3A, 10V 2V @ 11µA 1.5nC @ 5V 275pF @ 15V 4.5V, 10V ±20V
SI7434DP-T1-GE3
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RFQ
686
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Vishay Siliconix MOSFET N-CH 250V 2.3A PPAK SO-8 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 1.9W (Ta) N-Channel 250V 2.3A (Ta) 155 mOhm @ 3.8A, 10V 4V @ 250µA 50nC @ 10V - 6V, 10V ±20V
SI7434DP-T1-E3
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RFQ
3,495
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Vishay Siliconix MOSFET N-CH 250V 2.3A PPAK SO-8 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 1.9W (Ta) N-Channel 250V 2.3A (Ta) 155 mOhm @ 3.8A, 10V 4V @ 250µA 50nC @ 10V - 6V, 10V ±20V
IRFM120ATF
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RFQ
2,784
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ON Semiconductor MOSFET N-CH 100V 2.3A SOT-223 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223-4 2.4W (Ta) N-Channel 100V 2.3A (Ta) 200 mOhm @ 1.15A, 10V 4V @ 250µA 22nC @ 10V 480pF @ 25V 10V ±20V
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