5 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
RS1E280BNTB
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RFQ
1,396
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Rohm Semiconductor MOSFET N-CH 30V 28A 8HSOP - Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerTDFN 8-HSOP 3W (Ta), 30W (Tc) N-Channel - 30V 28A (Ta) 2.3 mOhm @ 28A, 10V 2.5V @ 1mA 94nC @ 10V 5100pF @ 15V 4.5V, 10V ±20V
TSM4806CS RLG
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RFQ
3,502
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 20V 28A 8SOP - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOP 2W (Ta) N-Channel - 20V 28A (Ta) 20 mOhm @ 20A, 4.5V 1V @ 250µA 12.3nC @ 4.5V 961pF @ 15V 1.8V, 4.5V ±8V
TPH5R906NH,L1Q
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RFQ
2,002
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Toshiba Semiconductor and Storage MOSFET N CH 60V 28A 8-SOP ADV U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 57W (Tc) N-Channel - 60V 28A (Ta) 5.9 mOhm @ 14A, 10V 4V @ 300µA 38nC @ 10V 3100pF @ 30V 10V ±20V
RS1E280GNTB
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RFQ
2,816
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Rohm Semiconductor MOSFET N-CH 30V 28A 8-HSOP - Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerTDFN 8-HSOP 3W (Ta), 31W (Tc) N-Channel - 30V 28A (Ta) 2.6 mOhm @ 28A, 10V 2.5V @ 1mA 36nC @ 10V 2300pF @ 15V 4.5V, 10V ±20V
FDB8442-F085
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RFQ
2,963
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ON Semiconductor MOSFET N-CH 40V 28A D2PAK Automotive, AEC-Q101, PowerTrench® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263AB 254W (Tc) N-Channel - 40V 28A (Ta) 5 mOhm @ 80A, 10V 4V @ 250µA 235nC @ 10V 12200pF @ 25V 10V ±20V
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