Power Dissipation (Max) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
CSD18511Q5AT
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RFQ
1,547
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Texas Instruments 40V N-CHANNEL NEXFET POWER MOSF NexFET™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-VSONP (5x6) 104W (Tc) N-Channel - 40V 159A (Tc) 3.5 mOhm @ 24A, 4.5V 2.45V @ 250µA 63nC @ 10V 5850pF @ 10V 4.5V, 10V ±20V
IRF40DM229
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1,754
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Infineon Technologies MOSFET N-CH 40V 159A ISOMETRICMF StrongIRFET™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MF DirectFET™ Isometric MF 83W (Tc) N-Channel - 40V 159A (Tc) 1.85 mOhm @ 97A, 10V 3.9V @ 100µA 161nC @ 10V 5317pF @ 25V 6V, 10V ±20V
CSD18511Q5A
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RFQ
1,178
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Texas Instruments 40V N CH MOSFET NexFET™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-VSONP (5x6) 104W (Tc) N-Channel - 40V 159A (Tc) 3.5 mOhm @ 24A, 4.5V 2.45V @ 250µA 63nC @ 10V 5850pF @ 10V 4.5V, 10V ±20V
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