Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
DMN6013LFGQ-7
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RFQ
3,785
Ships today + free overnight shipping
Diodes Incorporated MOSFET NCH 60V 10.3A POWERDI Automotive, AEC-Q101 Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PowerDI3333-8 1W (Ta) N-Channel - 60V 10.3A (Ta), 45A (Tc) 13 mOhm @ 10A, 10V 3V @ 250µA 55.4nC @ 10V 2577pF @ 30V 4.5V, 10V ±20V
DMN6013LFG-7
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RFQ
1,371
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Diodes Incorporated MOSFET N-CH 60V 10.3A PWDI3333-8 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN PowerDI3333-8 1W (Ta) N-Channel - 60V 10.3A (Ta), 45A (Tc) 13 mOhm @ 10A, 10V 3V @ 250µA 55.4nC @ 10V 2577pF @ 30V 4.5V, 10V ±20V
IRF7470TRPBF
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RFQ
3,546
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Infineon Technologies MOSFET N-CH 40V 10A 8-SOIC HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 40V 10A (Ta) 13 mOhm @ 10A, 10V 2V @ 250µA 44nC @ 4.5V 3430pF @ 20V 2.8V, 10V ±12V
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