Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPD50N03S4L06ATMA1
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RFQ
2,268
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 30V 50A TO252-3 Automotive, AEC-Q101, OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3-11 56W (Tc) N-Channel 30V 50A (Tc) 5.5 mOhm @ 50A, 10V 2.2V @ 20µA 31nC @ 10V 2330pF @ 25V 4.5V, 10V ±16V
DMTH6005LPS-13
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RFQ
986
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Diodes Incorporated MOSFET BVDSS: 41V 60V POWERDI506 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PowerDI5060-8 3.2W (Ta), 150W (Tc) N-Channel 60V 20.6A (Ta), 100A (Tc) 5.5 mOhm @ 50A, 10V 3V @ 250µA 47.1nC @ 10V 2962pF @ 30V 4.5V, 10V ±20V
DMTH6005LPSQ-13
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RFQ
752
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Diodes Incorporated MOSFET N-CH 60V 100A POWERDI506 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PowerDI5060-8 3.2W (Ta), 150W (Tc) N-Channel 60V 20.6A (Ta), 100A (Tc) 5.5 mOhm @ 50A, 10V 3V @ 250µA 47.1nC @ 10V 2962pF @ 30V 4.5V, 10V ±20V
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