Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FDMS8680
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RFQ
2,429
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ON Semiconductor MOSFET N-CH 30V 14A POWER56 PowerTrench® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PQFN (5x6) 2.5W (Ta), 50W (Tc) N-Channel 30V 14A (Ta), 35A (Tc) 7 mOhm @ 14A, 10V 3V @ 250µA 26nC @ 10V 1590pF @ 15V 4.5V, 10V ±20V
TSM070NA04LCR RLG
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RFQ
3,372
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Taiwan Semiconductor Corporation MOSFET N-CH 40V 91A 8PDFN - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 113W (Tc) N-Channel 40V 91A (Tc) 7 mOhm @ 14A, 10V 2.5V @ 250µA 23.5nC @ 10V 1469pF @ 20V 4.5V, 10V ±20V
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