Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2,067
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Infineon Technologies MOSFET NCH 650V 135A PG-HDSOP-10 CoolMOS™ G7 Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 10-PowerSOP Module PG-HDSOP-10-1 278W (Tc) N-Channel - 600V 47A (Tc) 50 mOhm @ 15.9A, 10V 4V @ 800µA 68nC @ 10V 2670pF @ 400V 10V ±20V
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RFQ
1,003
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Infineon Technologies MOSFET N-CH 650V 44A HSOF-8 CoolMOS™ G7 Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerSFN PG-HSOF-8 245W (Tc) N-Channel - 650V 44A (Tc) 50 mOhm @ 15.9A, 10V 4V @ 800µA 68nC @ 10V 2670pF @ 400V 10V ±20V
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