- Series :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,810
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Vishay Siliconix | MOSFET N-CH 40V PWRPAK SO-8 | TrenchFET® Gen IV | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | 6.25W (Ta), 100W (Tc) | N-Channel | - | 40V | 62.5A (Ta), 100A (Tc) | 1 mOhm @ 20A, 10V | 2.2V @ 250µA | 194nC @ 10V | 8445pF @ 20V | 4.5V, 10V | +20V, -16V | |||
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3,848
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Vishay Siliconix | MOSFET N-CH 40V PWRPAK SO-8 | TrenchFET® Gen IV | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | 6.25W (Ta), 100W (Tc) | N-Channel | - | 40V | 62.5A (Ta), 100A (Tc) | 1 mOhm @ 20A, 10V | 2.2V @ 250µA | 194nC @ 10V | 8445pF @ 20V | 4.5V, 10V | +20V, -16V | ||||
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2,230
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Vishay Siliconix | MOSFET N-CH 30V 100A PPAK SO-8 | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | 6.25W (Ta), 104W (Tc) | N-Channel | - | 30V | 100A (Tc) | 1 mOhm @ 20A, 10V | 2.2V @ 250µA | 220nC @ 10V | 11700pF @ 15V | 4.5V, 10V | +20V, -16V |