Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
NTMFS5C442NT1G
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RFQ
1,533
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ON Semiconductor T6 40V MOSFET - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN, 5 Leads 5-DFN (5x6) (8-SOFL) 3.7W (Ta), 83W (Tc) N-Channel - 40V 29A (Ta), 140A (Tc) 2.3 mOhm @ 50A, 10V 4V @ 250µA 6.6nC @ 10V 2100pF @ 25V 10V ±20V
TK100S04N1L,LQ
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RFQ
2,431
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Toshiba Semiconductor and Storage MOSFET N-CH 40V 100A DPAK U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK+ 100W (Tc) N-Channel - 40V 100A (Ta) 2.3 mOhm @ 50A, 10V 2.5V @ 500µA 76nC @ 10V 5490pF @ 10V 4.5V, 10V ±20V
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