Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TSM2N60SCW RPG
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RFQ
968
Ships today + free overnight shipping
Taiwan Semiconductor Corporation MOSFET N-CH 600V 600MA SOT223 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 2.5W (Tc) N-Channel - 600V 600mA (Tc) 5 Ohm @ 600mA, 10V 4V @ 250µA 13nC @ 10V 435pF @ 25V 10V ±30V
IRF7493TRPBF
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RFQ
853
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Infineon Technologies MOSFET N-CH 80V 9.3A 8-SOIC HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Tc) N-Channel - 80V 9.3A (Tc) 15 mOhm @ 5.6A, 10V 4V @ 250µA 53nC @ 10V 1510pF @ 25V 10V ±20V
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