- Manufacture :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
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- Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,131
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Toshiba Semiconductor and Storage | MOSFET N-CH 80V 116A 8DSOP | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-DSOP Advance | 800mW (Ta), 142W (Tc) | N-Channel | - | 80V | 116A (Tc) | 4 mOhm @ 50A, 10V | 4V @ 1mA | 59nC @ 10V | 5300pF @ 40V | 10V | ±20V | |||
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1,181
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Nexperia USA Inc. | MOSFET N-CH 100V 68A D2PAK | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 170W (Tc) | N-Channel | - | 100V | 68A (Tc) | 13.9 mOhm @ 15A, 10V | 4V @ 1mA | 59nC @ 10V | 3195pF @ 50V | 10V | ±20V | |||
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1,748
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Toshiba Semiconductor and Storage | MOSFET N CH 80V 60A SOP ADV | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 78W (Tc) | N-Channel | - | 80V | 60A (Tc) | 4 mOhm @ 30A, 10V | 4V @ 1mA | 59nC @ 10V | 5300pF @ 40V | 10V | ±20V |