4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TK55S10N1,LQ
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RFQ
1,055
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Toshiba Semiconductor and Storage MOSFET N-CH 100V 55A DPAK U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK+ 157W (Tc) N-Channel - 100V 55A (Ta) 6.5 mOhm @ 27.5A, 10V 4V @ 500µA 49nC @ 10V 3280pF @ 10V 10V ±20V
TK33S10N1Z,LQ
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2,404
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Toshiba Semiconductor and Storage MOSFET N-CH 100V 33A DPAK U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK+ 125W (Tc) N-Channel - 100V 33A (Ta) 9.7 mOhm @ 16.5A, 10V 4V @ 500µA 28nC @ 10V 2050pF @ 10V 10V ±20V
TPH4R606NH,L1Q
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RFQ
2,840
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Toshiba Semiconductor and Storage MOSFET N CH 60V 32A 8-SOP ADV U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 63W (Tc) N-Channel - 60V 32A (Ta) 4.6 mOhm @ 16A, 10V 4V @ 500µA 49nC @ 10V 3965pF @ 30V 6.5V, 10V ±20V
TPH8R80ANH,L1Q
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RFQ
696
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Toshiba Semiconductor and Storage MOSFET N CH 100V 32A 8-SOP U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 61W (Tc) N-Channel - 100V 32A (Tc) 8.8 mOhm @ 16A, 10V 4V @ 500µA 33nC @ 10V 2800pF @ 50V 10V ±20V
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