Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPD122N10N3GATMA1
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RFQ
1,116
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Infineon Technologies MOSFET N-CH 100V 59A OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 94W (Tc) N-Channel - 100V 59A (Tc) 12.2 mOhm @ 46A, 10V 3.5V @ 46µA 35nC @ 10V 2500pF @ 50V 6V, 10V ±20V
IPD096N08N3GATMA1
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RFQ
3,833
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Infineon Technologies MOSFET N-CH 80V 73A OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 100W (Tc) N-Channel - 80V 73A (Tc) 9.6 mOhm @ 46A, 10V 3.5V @ 46µA 35nC @ 10V 2410pF @ 40V 6V, 10V ±20V
IPB123N10N3GATMA1
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RFQ
3,640
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Infineon Technologies MOSFET N-CH 100V 58A TO263-3 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 94W (Tc) N-Channel - 100V 58A (Tc) 12.3 mOhm @ 46A, 10V 3.5V @ 46µA 35nC @ 10V 2500pF @ 50V 6V, 10V ±20V
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