- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
12 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,973
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Rohm Semiconductor | MOSFET N-CHANNEL 600V 7A TO263 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 78W (Tc) | N-Channel | Schottky Diode (Isolated) | 600V | 7A (Tc) | 620 mOhm @ 2.4A, 10V | 5V @ 1mA | 14.5nC @ 10V | 470pF @ 25V | 10V | ±20V | |||
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3,669
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Texas Instruments | 60V N CH MOSFET | NexFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-VSON (3.3x3.3) | 66W (Tc) | N-Channel | - | 60V | 12A (Ta), 60A (Tc) | 15.6 mOhm @ 12A, 4.5V | 2.7V @ 250µA | 14.5nC @ 10V | 1150pF @ 30V | 4.5V, 10V | ±20V | |||
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3,879
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Rohm Semiconductor | MOSFET N-CH 30V 8A 8-HUML | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerUDFN | HUML2020L8 | 2W (Ta) | N-Channel | - | 30V | 8A (Ta) | 17.6 mOhm @ 8A, 10V | 2V @ 250µA | 14.5nC @ 10V | 660pF @ 15V | 4.5V, 10V | ±20V | |||
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2,603
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Texas Instruments | 60V N-CHANNEL NEXFET POWER MOSF | NexFET™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-VSON (3.3x3.3) | 66W (Tc) | N-Channel | - | 60V | 12A (Ta), 60A (Tc) | 15.6 mOhm @ 12A, 4.5V | 2.7V @ 250µA | 14.5nC @ 10V | 1150pF @ 30V | 4.5V, 10V | ±20V | |||
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3,458
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Central Semiconductor Corp | MOSFET N-CH 7A 600V DPAK | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | - | 600V | 7A (Tc) | 580 mOhm @ 3.5A, 10V | 4V @ 250µA | 14.5nC @ 10V | 440pF @ 100V | 10V | 30V | |||
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3,170
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Rohm Semiconductor | MOSFET N-CH 30V 8A HSMT8 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-HSMT (3.2x3) | 2W (Ta) | N-Channel | - | 30V | 8A (Ta) | 15.2 mOhm @ 8A, 10V | 2.5V @ 1mA | 14.5nC @ 10V | 660pF @ 15V | 4.5V, 10V | ±20V | |||
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3,151
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ON Semiconductor | MOSFET N-CH 150V 14A DPAK | PowerTrench® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 65W (Tc) | N-Channel | - | 150V | 2.8A (Ta), 14A (Tc) | 120 mOhm @ 4A, 10V | 4V @ 250µA | 14.5nC @ 10V | 770pF @ 25V | 6V, 10V | ±20V | |||
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833
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Vishay Siliconix | MOSFET N-CH 200V 2.6A SC70-6 | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 | PowerPAK® SC-70-6 Single | 3.5W (Ta), 19W (Tc) | N-Channel | - | 200V | 2.6A (Tc) | 1.38 Ohm @ 750mA, 4.5V | 1.4V @ 250µA | 14.5nC @ 10V | 350pF @ 100V | 1.8V, 4.5V | ±16V | |||
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2,839
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Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 650V 7A DPAK | DTMOSV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | - | 650V | 7A (Tc) | 560 mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5nC @ 10V | 380pF @ 300V | 10V | ±30V | |||
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3,268
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 600V 4A TO252 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 50W (Tc) | N-Channel | - | 600V | 4A (Tc) | 2.5 Ohm @ 2A, 10V | 4.5V @ 250µA | 14.5nC @ 10V | 500pF @ 25V | 10V | ±30V | |||
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3,004
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Vishay Siliconix | MOSFET N-CH 30V 8A SOT-23 | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236 | 3W (Tc) | N-Channel | - | 30V | 8A (Tc) | 24 mOhm @ 12A, 10V | 2.5V @ 250µA | 14.5nC @ 10V | 540pF @ 15V | 4.5V, 10V | ±20V | |||
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3,226
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Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 600V 7A DPAK | DTMOSV | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | - | 600V | 7A (Tc) | 560 mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5nC @ 10V | 380pF @ 300V | 10V | ±30V |