Drain to Source Voltage (Vdss) :
Drive Voltage (Max Rds On, Min Rds On) :
12 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
R6007KNJTL
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3,973
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Rohm Semiconductor MOSFET N-CHANNEL 600V 7A TO263 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 78W (Tc) N-Channel Schottky Diode (Isolated) 600V 7A (Tc) 620 mOhm @ 2.4A, 10V 5V @ 1mA 14.5nC @ 10V 470pF @ 25V 10V ±20V
CSD18543Q3A
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3,669
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Texas Instruments 60V N CH MOSFET NexFET™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN 8-VSON (3.3x3.3) 66W (Tc) N-Channel - 60V 12A (Ta), 60A (Tc) 15.6 mOhm @ 12A, 4.5V 2.7V @ 250µA 14.5nC @ 10V 1150pF @ 30V 4.5V, 10V ±20V
RF4E080BNTR
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3,879
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Rohm Semiconductor MOSFET N-CH 30V 8A 8-HUML - Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerUDFN HUML2020L8 2W (Ta) N-Channel - 30V 8A (Ta) 17.6 mOhm @ 8A, 10V 2V @ 250µA 14.5nC @ 10V 660pF @ 15V 4.5V, 10V ±20V
CSD18543Q3AT
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2,603
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Texas Instruments 60V N-CHANNEL NEXFET POWER MOSF NexFET™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN 8-VSON (3.3x3.3) 66W (Tc) N-Channel - 60V 12A (Ta), 60A (Tc) 15.6 mOhm @ 12A, 4.5V 2.7V @ 250µA 14.5nC @ 10V 1150pF @ 30V 4.5V, 10V ±20V
CDM7-600LR TR13
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3,458
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Central Semiconductor Corp MOSFET N-CH 7A 600V DPAK - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 60W (Tc) N-Channel - 600V 7A (Tc) 580 mOhm @ 3.5A, 10V 4V @ 250µA 14.5nC @ 10V 440pF @ 100V 10V 30V
RQ3E080BNTB
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3,170
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Rohm Semiconductor MOSFET N-CH 30V 8A HSMT8 - Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-HSMT (3.2x3) 2W (Ta) N-Channel - 30V 8A (Ta) 15.2 mOhm @ 8A, 10V 2.5V @ 1mA 14.5nC @ 10V 660pF @ 15V 4.5V, 10V ±20V
FDD120AN15A0
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3,151
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ON Semiconductor MOSFET N-CH 150V 14A DPAK PowerTrench® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 65W (Tc) N-Channel - 150V 2.8A (Ta), 14A (Tc) 120 mOhm @ 4A, 10V 4V @ 250µA 14.5nC @ 10V 770pF @ 25V 6V, 10V ±20V
SIA456DJ-T1-GE3
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RFQ
833
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Vishay Siliconix MOSFET N-CH 200V 2.6A SC70-6 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SC-70-6 PowerPAK® SC-70-6 Single 3.5W (Ta), 19W (Tc) N-Channel - 200V 2.6A (Tc) 1.38 Ohm @ 750mA, 4.5V 1.4V @ 250µA 14.5nC @ 10V 350pF @ 100V 1.8V, 4.5V ±16V
TK560P65Y,RQ
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2,839
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Toshiba Semiconductor and Storage MOSFET N-CHANNEL 650V 7A DPAK DTMOSV Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 60W (Tc) N-Channel - 650V 7A (Tc) 560 mOhm @ 3.5A, 10V 4V @ 240µA 14.5nC @ 10V 380pF @ 300V 10V ±30V
TSM4NB60CP ROG
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RFQ
3,268
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 4A TO252 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 50W (Tc) N-Channel - 600V 4A (Tc) 2.5 Ohm @ 2A, 10V 4.5V @ 250µA 14.5nC @ 10V 500pF @ 25V 10V ±30V
SQ2348ES-T1_GE3
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RFQ
3,004
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Vishay Siliconix MOSFET N-CH 30V 8A SOT-23 TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236 3W (Tc) N-Channel - 30V 8A (Tc) 24 mOhm @ 12A, 10V 2.5V @ 250µA 14.5nC @ 10V 540pF @ 15V 4.5V, 10V ±20V
TK560P60Y,RQ
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RFQ
3,226
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Toshiba Semiconductor and Storage MOSFET N-CHANNEL 600V 7A DPAK DTMOSV Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 60W (Tc) N-Channel - 600V 7A (Tc) 560 mOhm @ 3.5A, 10V 4V @ 240µA 14.5nC @ 10V 380pF @ 300V 10V ±30V
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