- Series :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
5 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,472
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Diodes Incorporated | MOSFET N-CH 12V 3.2A DFN1010-3 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | X2-DFN1010-3 | 500mW (Ta) | N-Channel | - | 12V | 3.2A (Ta) | 45 mOhm @ 3.2A, 4.5V | 1V @ 250µA | 4.8nC @ 4.5V | 375pF @ 10V | 1.5V, 4.5V | ±8V | ||
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2,033
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Diodes Incorporated | MOSFET N-CH 20V 2.1A SOT23-3 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 625mW (Ta) | N-Channel | - | 20V | 2.1A (Ta) | 100 mOhm @ 2.4A, 4.5V | 1V @ 250µA | 4.8nC @ 4.5V | 370pF @ 10V | 1.8V, 4.5V | ±8V | ||
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635
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 9A UDFN6B | U-MOSVII | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1.25W (Ta) | N-Channel | - | 30V | 9A (Ta) | 19.5 mOhm @ 4A, 10V | 2.5V @ 100µA | 4.8nC @ 4.5V | 620pF @ 15V | 4.5V, 10V | ±20V | ||
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2,765
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Diodes Incorporated | MOSFET N-CH 20V 4.1A SOT23-3 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 960mW (Ta) | N-Channel | - | 20V | 4.1A (Ta) | 45 mOhm @ 2.5A, 4.5V | 1.5V @ 250µA | 4.8nC @ 4.5V | 452pF @ 10V | 2.5V, 4.5V | ±12V | ||
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3,514
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Infineon Technologies | MOSFET N-CH 30V 8.2A 6TSOP | HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | 6-TSOP | 2W (Ta) | N-Channel | - | 30V | 8.2A (Ta) | 19 mOhm @ 8.2A, 10V | 2.35V @ 25µA | 4.8nC @ 4.5V | 560pF @ 25V | 4.5V, 10V | ±20V |
