Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SI1070X-T1-GE3
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RFQ
3,567
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Vishay Siliconix MOSFET N-CH 30V 1.2A SOT563F TrenchFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-563, SOT-666 SC-89-6 236mW (Ta) N-Channel - 30V - 99 mOhm @ 1.2A, 4.5V 1.55V @ 250µA 8.3nC @ 5V 385pF @ 15V 2.5V, 4.5V ±12V
BUK9M42-60EX
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RFQ
1,184
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Nexperia USA Inc. MOSFET N-CH 60V 22A LFPAK Automotive, AEC-Q101, TrenchMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount SOT-1210, 8-LFPAK33 (5-Lead) LFPAK33 44W (Tc) N-Channel - 60V 22A (Tc) 37 mOhm @ 5A, 10V 2.1V @ 1mA 8.3nC @ 5V 867pF @ 25V 5V ±10V
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