- Manufacture :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Drive Voltage (Max Rds On, Min Rds On) :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,802
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Nexperia USA Inc. | MOSFET N-CH 80V LFPAK | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 117W (Tc) | N-Channel | - | 80V | 67A (Tc) | 11 mOhm @ 25A, 10V | 4V @ 1mA | 45nC @ 10V | 2800pF @ 40V | 10V | ±20V | ||
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2,508
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|
Vishay Siliconix | MOSFET N-CH 80V 60A PPAK SO-8 | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 6.25W (Ta), 104W (Tc) | N-Channel | - | 80V | 60A (Tc) | 5.5 mOhm @ 20A, 10V | 2.8V @ 250µA | 86nC @ 10V | 2800pF @ 40V | 4.5V, 10V | ±20V |
