- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
10 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,807
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Diodes Incorporated | MOSFET N-CH 30V 5.2A SOT-23 | - | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 1.4W (Ta) | N-Channel | 30V | 5.2A (Ta) | 35 mOhm @ 5.2A, 10V | 3V @ 250µA | - | 390pF @ 15V | 4.5V, 10V | ±20V | ||
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1,179
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NXP USA Inc. | MOSFET N-CH 30V 5.2A SOT23 | - | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 510mW (Ta) | N-Channel | 30V | 5.2A (Ta) | 22 mOhm @ 5.2A, 10V | 2.5V @ 250µA | 13nC @ 10V | 480pF @ 15V | 4.5V, 10V | ±20V | ||
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650
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Vishay Siliconix | MOSFET P-CH 8V 5.2A 1206-8 | TrenchFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1206-8 ChipFET™ | 1.3W (Ta) | P-Channel | 8V | 5.2A (Ta) | 33 mOhm @ 5.2A, 4.5V | 1V @ 250µA | 21nC @ 4.5V | - | 1.8V, 4.5V | ±8V | ||
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3,214
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Vishay Siliconix | MOSFET P-CH 20V 5.2A 1206-8 | TrenchFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 1206-8 ChipFET™ | 1.3W (Ta) | P-Channel | 20V | 5.2A (Ta) | 32 mOhm @ 5.2A, 4.5V | 1V @ 250µA | 25nC @ 4.5V | - | 1.8V, 4.5V | ±8V | ||
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3,784
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|
ON Semiconductor | MOSFET N-CH 30V 5.2A SSOT-6 | - | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | SuperSOT™-6 | 1.6W (Ta) | N-Channel | 30V | 5.2A (Ta) | 42 mOhm @ 5.2A, 4.5V | 1V @ 250µA | 16nC @ 4.5V | 538pF @ 10V | 2.5V, 4.5V | ±8V | ||
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3,839
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Infineon Technologies | MOSFET N-CH 150V 5.2A 8-SOIC | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 3W (Ta) | N-Channel | 150V | 5.2A (Ta) | 44 mOhm @ 3.1A, 10V | 4V @ 250µA | 54nC @ 10V | 1750pF @ 25V | 10V | ±20V | ||
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2,595
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 5.2A TSM | U-MOSV | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | P-Channel | 20V | 5.2A (Ta) | 46 mOhm @ 3A, 4.5V | 1V @ 1mA | 8.1nC @ 4.5V | 640pF @ 10V | 1.5V, 4.5V | ±8V | ||
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1,324
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ON Semiconductor | MOSFET N-CH 20V 5.2A CHIPFET | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | ChipFET™ | 1.3W (Ta) | N-Channel | 20V | 5.2A (Ta) | 30 mOhm @ 5.2A, 4.5V | 600mV @ 250µA | 18nC @ 4.5V | - | 2.5V, 4.5V | ±12V | ||
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863
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Infineon Technologies | MOSFET N-CH 55V 5.2A SOT223 | Automotive, AEC-Q101, HEXFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223 | 1W (Ta) | N-Channel | 55V | 5.2A (Ta) | 40 mOhm @ 3.8A, 10V | 2V @ 250µA | 48nC @ 10V | 870pF @ 25V | 4V, 10V | ±16V | ||
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3,492
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|
Nexperia USA Inc. | MOSFET P-CH 20V SC-74 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-74, SOT-457 | 6-TSOP | 550mW (Ta), 6.25W (Tc) | P-Channel | 20V | 5.2A (Ta) | 34 mOhm @ 5.2A, 4.5V | 900mV @ 250µA | 23nC @ 4.5V | 1575pF @ 10V | 1.5V, 4.5V | ±12V |
