- Manufacture :
- Series :
- Part Status :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
1,675
Ships today + free overnight shipping
|
Vishay Siliconix | MOSFET P-CH 60V 8.8A DPAK | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 42W (Tc) | P-Channel | - | 60V | 8.8A (Tc) | 280 mOhm @ 5.3A, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | ||
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2,515
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Nexperia USA Inc. | MOSFET N-CH 200V 8.8A 8HVSON | TrenchMOS™ | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN3333 (3.3x3.3) | 50W (Tc) | N-Channel | - | 200V | 8.8A (Tc) | 294 mOhm @ 2.6A, 10V | 4V @ 1mA | 13.3nC @ 10V | 657pF @ 30V | 6V, 10V | ±20V | ||
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1,975
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|
Vishay Siliconix | MOSFET P-CH 60V 8.8A DPAK | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 42W (Tc) | P-Channel | - | 60V | 8.8A (Tc) | 280 mOhm @ 5.3A, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | ||
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3,658
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|
Vishay Siliconix | MOSFET P-CH 100V 8.8A DPAK | TrenchFET® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 2.5W (Ta), 32.1W (Tc) | P-Channel | - | 100V | 8.8A (Tc) | 195 mOhm @ 3.6A, 10V | 2.5V @ 250µA | 34.8nC @ 10V | 1055pF @ 50V | 4.5V, 10V | ±20V |
