Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STB21N90K5
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RFQ
1,331
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 900V 18.5A D2PAK SuperMESH5™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 250W (Tc) N-Channel 900V 18.5A (Tc) 299 mOhm @ 9A, 10V 5V @ 100µA 43nC @ 10V 1645pF @ 100V 10V ±30V
IRL60HS118
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RFQ
3,549
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Infineon Technologies MOSFET N-CH 60V 18.5A 6PQFN - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 6-VDFN Exposed Pad 6-PQFN (2x2) 11.5W (Tc) N-Channel 60V 18.5A (Tc) 17 mOhm @ 11A, 10V 2.3V @ 10µA 8nC @ 4.5V 660pF @ 25V 4.5V, 10V ±20V
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