Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
BSC050N03LSGATMA1
GET PRICE
RFQ
1,173
Ships today + free overnight shipping
Infineon Technologies MOSFET N-CH 30V 80A TDSON-8 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 50W (Tc) N-Channel - 30V 18A (Ta), 80A (Tc) 5 mOhm @ 30A, 10V 2.2V @ 250µA 35nC @ 10V 2800pF @ 15V 4.5V, 10V ±20V
FDB050AN06A0
GET PRICE
RFQ
866
Ships today + free overnight shipping
ON Semiconductor MOSFET N-CH 60V 80A TO-263AB PowerTrench® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK 245W (Tc) N-Channel - 60V 18A (Ta), 80A (Tc) 5 mOhm @ 80A, 10V 4V @ 250µA 80nC @ 10V 3900pF @ 25V 6V, 10V ±20V
Page 1 / 1