Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
NVTFS5C466NLTAG
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3,890
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ON Semiconductor MOSFET N-CHANNEL 40V 51A 8WDFN Automotive, AEC-Q101 Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerWDFN 8-WDFN (3.3x3.3) 38W (Tc) N-Channel - 40V 51A (Tc) 7.3 mOhm @ 10A, 10V 2.2V @ 250µA 7nC @ 4.5V 880pF @ 25V 4.5V, 10V ±20V
NVTFS5C466NLWFTAG
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1,282
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ON Semiconductor MOSFET N-CHANNEL 40V 51A 8WDFN Automotive, AEC-Q101 Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerWDFN 8-WDFN (3.3x3.3) 38W (Tc) N-Channel - 40V 51A (Tc) 7.3 mOhm @ 10A, 10V 2.2V @ 250µA 7nC @ 4.5V 880pF @ 25V 4.5V, 10V ±20V
CSD17578Q3AT
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2,366
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Texas Instruments MOSFET N-CH 30V 35A 8VSON NexFET™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN 8-VSONP (3x3.15) 3.2W (Ta), 37W (Tc) N-Channel - 30V 20A (Ta) 7.3 mOhm @ 10A, 10V 1.9V @ 250µA 22.2nC @ 10V 1590pF @ 15V 4.5V, 10V ±20V
CSD17578Q3A
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2,558
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Texas Instruments MOSFET N-CH 30V 35A 8VSON NexFET™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN 8-VSONP (3x3.15) 3.2W (Ta), 37W (Tc) N-Channel - 30V 20A (Ta) 7.3 mOhm @ 10A, 10V 1.9V @ 250µA 22.2nC @ 10V 1590pF @ 15V 4.5V, 10V ±20V
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