Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRFH7188TRPBF
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RFQ
1,510
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Infineon Technologies MOSFET N-CH 100V 18A FASTIRFET™, HEXFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PQFN (5x6) 3.8W (Ta), 132W (Tc) N-Channel - 100V 18A (Ta), 105A (Tc) 6 mOhm @ 50A, 10V 3.9V @ 150µA 50nC @ 10V 2116pF @ 50V 10V ±20V
BSC060N10NS3GATMA1
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RFQ
1,321
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Infineon Technologies MOSFET N-CH 100V 90A TDSON-8 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 125W (Tc) N-Channel - 100V 14.9A (Ta), 90A (Tc) 6 mOhm @ 50A, 10V 3.5V @ 90µA 68nC @ 10V 4900pF @ 50V 6V, 10V ±20V
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