Supplier Device Package :
Power Dissipation (Max) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TSM3N100CP ROG
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RFQ
1,053
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Taiwan Semiconductor Corporation MOSFET N-CH 1000V 2.5A TO252 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 99W (Tc) N-Channel - 1000V 2.5A (Tc) 6 Ohm @ 1.25A, 10V 5.5V @ 250µA 19nC @ 10V 664pF @ 25V 10V ±30V
STD3NK100Z
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RFQ
2,507
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STMicroelectronics MOSFET N-CH 1000V 2.5A DPAK SuperMESH™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 90W (Tc) N-Channel - 1000V 2.5A (Tc) 6 Ohm @ 1.25A, 10V 4.5V @ 50µA 18nC @ 10V 601pF @ 25V 10V ±30V
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