Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPD180N10N3GBTMA1
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RFQ
3,271
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Infineon Technologies MOSFET N-CH 100V 43A TO252-3 OptiMOS™ Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 71W (Tc) N-Channel - 100V 43A (Tc) 18 mOhm @ 33A, 10V 3.5V @ 33µA 25nC @ 10V 1800pF @ 50V 6V, 10V ±20V
IPD180N10N3GATMA1
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RFQ
1,917
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Infineon Technologies MV POWER MOS OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 71W (Tc) N-Channel - 100V 43A (Tc) 18 mOhm @ 33A, 10V 3.5V @ 33µA 25nC @ 10V 1800pF @ 50V 6V, 10V ±20V
IRFR3710ZTRPBF
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RFQ
2,205
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Infineon Technologies MOSFET N-CH 100V 42A DPAK HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 140W (Tc) N-Channel - 100V 42A (Tc) 18 mOhm @ 33A, 10V 4V @ 250µA 100nC @ 10V 2930pF @ 25V 10V ±20V
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