Drain to Source Voltage (Vdss) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TK290P60Y,RQ
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RFQ
3,717
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Toshiba Semiconductor and Storage MOSFET N-CH 600V 11.5A DPAK DTMOSV Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 100W (Tc) N-Channel - 600V 11.5A (Tc) 290 mOhm @ 5.8A, 10V 4V @ 450µA 25nC @ 10V 730pF @ 300V 10V ±30V
TK290P65Y,RQ
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3,528
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Toshiba Semiconductor and Storage MOSFET N-CH 650V 11.5A DPAK DTMOSV Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 100W (Tc) N-Channel - 650V 11.5A (Tc) 290 mOhm @ 5.8A, 10V 4V @ 450µA 25nC @ 10V 730pF @ 300V 10V ±30V
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