Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
BSC019N04NSGATMA1
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RFQ
1,723
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Infineon Technologies MOSFET N-CH 40V 100A TDSON-8 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 125W (Tc) N-Channel - 40V 30A (Ta), 100A (Tc) 1.9 mOhm @ 50A, 10V 4V @ 85µA 108nC @ 10V 8800pF @ 20V 10V ±20V
IPC100N04S51R9ATMA1
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RFQ
1,007
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Infineon Technologies N-CHANNEL_30/40V Automotive, AEC-Q101, OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8-34 100W (Tc) N-Channel - 40V 100A (Tc) 1.9 mOhm @ 50A, 10V 3.4V @ 50µA 65nC @ 10V 3770pF @ 25V 7V, 10V ±20V
IPC100N04S5L1R9ATMA1
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RFQ
3,964
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Infineon Technologies MOSFET N-CH 40V 100A 8TDSON OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 100W (Tc) N-Channel - 40V 100A (Tc) 1.9 mOhm @ 50A, 10V 2V @ 50µA 81nC @ 10V 4310pF @ 25V 4.5V, 10V ±16V
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