Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STB24N60DM2
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RFQ
3,017
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 600V 18A D2PAK FDmesh™ II Plus Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 150W (Tc) N-Channel 600V 18A (Tc) 200 mOhm @ 9A, 10V 5V @ 250µA 29nC @ 10V 1055pF @ 100V 10V ±25V
BUZ31 H3045A
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RFQ
3,196
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Infineon Technologies MOSFET N-CH 200V 14.5A TO263 SIPMOS® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 95W (Tc) N-Channel 200V 14.5A (Tc) 200 mOhm @ 9A, 10V 4V @ 1mA - 1120pF @ 25V 10V ±20V
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