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IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
BSC900N20NS3GATMA1
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RFQ
912
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Infineon Technologies MOSFET N-CH 200V 15.2A 8TDSON OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 62.5W (Tc) N-Channel - 200V 15.2A (Tc) 90 mOhm @ 7.6A, 10V 4V @ 30µA 11.6nC @ 10V 920pF @ 100V 10V ±20V
BSZ900N20NS3GATMA1
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RFQ
3,189
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Infineon Technologies MOSFET N-CH 200V 15.2A 8TSDSON OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 62.5W (Tc) N-Channel - 200V 15.2A (Tc) 90 mOhm @ 7.6A, 10V 4V @ 30µA 11.6nC @ 10V 920pF @ 100V 10V ±20V
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