Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FQD7N20LTM
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RFQ
1,459
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ON Semiconductor MOSFET N-CH 200V 5.5A DPAK QFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 2.5W (Ta), 45W (Tc) N-Channel 200V 5.5A (Tc) 750 mOhm @ 2.75A, 10V 2V @ 250µA 9nC @ 5V 500pF @ 25V 5V, 10V ±20V
ZXMN20B28KTC
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RFQ
1,259
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Diodes Incorporated MOSFET N-CH 200V 1.5A DPAK - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3 2.2W (Ta) N-Channel 200V 1.5A (Ta) 750 mOhm @ 2.75A, 10V 2.5V @ 250µA 8.1nC @ 5V 358pF @ 25V 5V, 10V ±20V
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