Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
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IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
PSMN3R5-30LL,115
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2,419
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NXP USA Inc. MOSFET N-CH 30V QFN3333 - Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-VDFN Exposed Pad 8-DFN3333 (3.3x3.3) 71W (Tc) N-Channel - 30V 40A (Tc) 3.6 mOhm @ 10A, 10V 2.15V @ 1mA 37nC @ 10V 2061pF @ 15V 4.5V, 10V ±20V
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973
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Vishay Siliconix MOSFET N-CHAN 30V TrenchFET® Gen IV Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 5W (Ta), 43W (Tc) N-Channel - 30V 30A (Ta), 60A (Tc) 3.6 mOhm @ 10A, 10V 2.4V @ 250µA 36.2nC @ 10V 1710pF @ 15V 4.5V, 10V +20V, -16V
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